GeP is a semiconductor 2D material having a bandgap of ~1.68eV for monolayers and ~0.51eV for bulk crystals. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers.
The GeP crystals produced at HQ Graphene have a typical lateral size of ~0.1-0.3 cm, hexagonal shaped and have a metallic appearance.
