HfS2 is a semiconductor with an indirect band gap of ~2 eV. Single layer Hafnium Disulfide is predicted to have a direct band gap of ~1.2 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. HfS2 belongs to the group-IV transition metal dichalcogenides (TMDC).
The Hafnium Disulfide crystals produced at HQ Graphene have a lateral size of ~0.6-0.8 cm, are hexagonal shaped and have a red transparent appearance.
