Introduction of achievements

Regulating the electrical properties of crystalline materials is the core of materials science and electronics. Generating an electric field effect through external voltage is a clean, continuous, and systematic method.

In view of this, recently, Professor Zeng Hualing and Professor Zhu Wenguang (co corresponding author) from the Hefei National Laboratory of Microscale Material Science at the University of Science and Technology of China collaborated to utilize the unique electric dipole locking in van der Waals (vdW) ferroelectric α - In2Se3, inducing and controlling electrostatic doping in the out of plane direction through in-plane voltage, achieving electrical gate control. The vertical vdW heterojunction of ultra-thin α - In2Se3 and MoS2 was used to experimentally verify an in-plane voltage gate controlled coplanar field-effect transistor with excellent holding on/off ratio. The research results of this article indicate that ferroelectrics have unprecedented electrical control functions, which paves the way for integrating 2D ferroelectrics into novel nanoelectronic devices with wide applications.

图文导读 

Figure 1. Ferroelectric polarization locking in α - In2Se3.

Figure 2. Control of in-plane electric field for out of plane polarization.

Figure 3. Surface potential of ferroelectric domains.

Figure 4. Demonstration of in-plane voltage gate controlled field-effect transistor.

Literature information

Orthogonal Electric Control of the Out-Of-Plane Field-Effect in 2D Ferroelectric α-In₂Se₃ (Adv. Electron. Mater., 2020, DOI:10.1002/aelm.202000061)

文献链接：https://onlinelibrary.wiley.com/doi/10.1002/aelm.202000061

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